Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 516-520

  Pan, Zhong ^a   Li, Lianhe ^a   Zhang, Wei ^a   Wang, Xueyu ^a   Lin, Yaowang ^a   Wu, Ronghan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Adsorption; A1. Characterization; A1. Radiation; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ADSORPTION; ANNEALING; PHOTOLUMINESCENCE; PLASMA SOURCES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399378     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00758-8     Document Type: Conference Paper

References (13)