Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 6409-6411

  Pan, Z ^a   Miyamoto, T ^a   Schlenker, D ^a   Sato, S ^a,b   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744379038     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368967     Document Type: Article

References (16)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
2. M. C. Larson, M. Kondow, T. Kitatani, Y. Yazawa, and M. Okai, Electron. Lett. 33, 959 (1997).
3. K. Iga, IPRM'96, ThA1-1 (1996).
4. T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, and K. Iga, Quantum Optoelectronics of 1997 OSA Technical Digest Series, 9, 126 (1997).
5. M. C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, and K. Uomi, LEOS'97, PD1.3 (1997).
6. S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, Electron. Lett. 33, 1386 (1997).
7. S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, in Ref. 5, ThE1.
8. G. B. Stringfellow, J. Electrochem. Soc. 119, 1780 (1972).
9. Y. Qiu, S. A. Nikishin, H. Temkin, V. A. Elyukhin, and Yu. A. Kudravtsev, Appl. Phys. Lett. 70, 2831 (1997).
10. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 51, 10568 (1995).
11. I. Ho and G. B. Stringfellow, J. Cryst. Growth 178, 1 (1997).
12. A. Ougazzaden, Y. Le, Bellego, E. V. K. Rao, M. Juhel, L. Leprince, and G. Patriarche, Appl. Phys. Lett. 70, 2861 (1997).
13. M. Sato, U. Zeimer, F. Bugge, S. Gramlich, and M. Weyers, Appl. Phys. Lett. 70, 1134 (1997).
14. C. H. Chen, C. A. Larsen, and G. B. Stringfellow, Appl. Phys. Lett. 50, 218 (1987).
15. P. W. Lee, T. R. Omstead, D. R. Mckenna, and K. F. Jensen, J. Cryst. Growth 93, 134 (1988).
16. D. A. Neumayer and J. G. Ekerdt, Chem. Mater. 8, 9 (1996).