Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor heterostructures

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 126-130

  Volz, K ^a   Koch, J ^a   Kunert, B ^a   Nemeth, I ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A1. Crystal structure; A3. Organometallic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III V materials; B3. Laser diodes; B3. Solar cells

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SOLAR CELLS;

BAND GAPS; DILUTE NITRIDES; INHOMOGENEOUS STRAIN FIELDS; OPTOELECTRONIC PROPERTIES;

QUANTUM WELL LASERS;

EID: 33846439023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.014     Document Type: Article

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