Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode

Electronics Letters

Volumn 32, Issue 24, 1996, Pages 2244-2245

  Kondow, M ^a   Natatsuka, S ^a   Kitatani, T ^a   Yazawa, Y ^a   Okai, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

Gallium arsenide; Lasers

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CONTINUOUS WAVE OPERATIONS;

QUANTUM WELL LASERS;

EID: 0030289447     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961480     Document Type: Article

References (5)

1. YABLONOVITCH, E., and KANE, O.E.: 'Reduction of lasing threshold current density by lowering of valence band effective mass'. J. Lightwave Technol., 1986. 4, pp. 504-506
2. KONDOW, M., UOMI. K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GalnNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
3. NAKAHARA, K., KONDOW, M., KITATANI, T., YAZAWA, Y., and UOMI. K.: 'Continuous-wave operation of long-wavelength GalnNAs/GaAs quantum well laser', Electron. Left., 1996, 32, (17), pp. 1585-1586
4. KONDOW, M., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'GalnNAs/ GaAs: novel III-V semiconductor'. Proc. MRS-J Symp. R, Chiba, 1996, pp. 42-45
5. KONDOW, M., UOMI, K., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'Extremely large N content (up to 10%) in GaNAs grown by gassource molecular beam epitaxy', J. Crystal Growth, 1996, 164, pp. 175-179