Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Volz, K ^a   Torunski, T ^b   Rubel, O ^b   Stolz, W ^b   Kruse, P ^b   Gerthsen, D ^b   Schowalter, M ^b   Rosenauer, A ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; NITROGEN; OPTIMIZATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

NANOSCALE INDIUM; NITROGEN DISTRIBUTION; QUATERNARY MATERIAL; THERMAL ANNEALING;

INDIUM COMPOUNDS;

EID: 35648940744     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794739     Document Type: Article

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