Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 739-747

  Volz, Kerstin ^a   Torunski, Torsten ^a   Kunert, Bernardette ^a   Rubel, Oleg ^a   Nau, Siegfried ^a   Reinhard, Stefan ^a   Stolz, Wolfgang ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A1. Defects; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting iii v materials; B3. Laser diodes; B3. Solar cells

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; DISSOLUTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MATCH; SEMICONDUCTING III/V MATERIALS; VALENCE FORCE FIELD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9944250328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.012     Document Type: Conference Paper

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