|
|
Volumn 227-228, Issue , 2001, Pages 521-526
|
|
Molecular beam epitaxy of GaInNAs by using solid source arsenic
a
a
HITACHI LTD
(Japan)
|
|
Author keywords
A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes
|
|
Indexed keywords
ANNEALING;
ARSENIC;
HYDROGEN;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR LASERS;
SOLID-SOURCE MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
|
EID: 0035398124
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00759-X Document Type: Conference Paper |
|
Times cited : (24)
|
|
References (15)
|
