(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 185-188

  Mereuta, A ^a   Saint Girons, G ^a   Bouchoule, S ^b   Sagnes, I ^a   Alexandre, F ^b   Le Roux, G ^a   Decobert, J ^b   Ougazzaden, A ^c  

^a ORANGE LABS   (France)

^b OPTO+   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

DMHy; GaNAs; InGaNAs; MOVPE

Indexed keywords

CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM NITROGEN ARSENIDE;

QUANTUM WELL LASERS;

EID: 0035360409     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00079-9     Document Type: Conference Paper

References (9)