Interface analysis of HfO2 films on (1 0 0)Si using x-ray photoelectron spectroscopy

Journal of Physics D: Applied Physics

Volumn 42, Issue 3, 2009, Pages

  Sokolov, A A ^a   Filatova, E O ^a   Afanas'Ev, V V ^b   Taracheva, E Yu ^a   Brzhezinskaya, M M ^c   Ovchinnikov, A A ^a  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYERS; ELECTRON DENSITIES; ELECTRON STATE; IN-DEPTH PROFILING; INTERFACE ANALYSIS; ION-SPUTTERING; METALLO-ORGANIC; NANOMETRE; OXIDE STRUCTURES; SI CRYSTALS; THIN LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS;

ATOMIC SPECTROSCOPY; ELECTRON SPECTROSCOPY; ELECTRONS; HAFNIUM; HAFNIUM COMPOUNDS; ORGANIC CHEMICALS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SILICON; SPECTRUM ANALYSIS; SPUTTERING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 63749112204     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035308     Document Type: Article

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