High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 1005-1007

  Kobayashi, K ^a   Yabashi, M ^a   Takata, Y ^b   Tokushima, T ^b   Shin, S ^b   Tamasaku, K ^b   Miwa, D ^b   Ishikawa, T ^b   Nohira, H ^c   Hattori, T ^c   Sugita, Y ^d   Nakatsuka, O ^e   Sakai, A ^e   Zaima, S ^e  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b RIKEN/SPring 8 ^*  (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

^e NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; INTERFACES (MATERIALS); PERMITTIVITY; PHOTONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD);

SYNCHROTRON RADIATION;

EID: 0042377613     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595714     Document Type: Article

References (11)

1. The electron inelastic-mean-free-paths were estimated using NIST Standard Reference Database 71, "NIST Electron Inelastic-Mean-Free-Path Database: Ver. 1.1." It is distributed via the Web site http://www.nist.gov/srd/nist71.htm, and references therein.
2. J.-J. Yeh and I. Lindau, At. Data Nucl. Data Tables 32, 1 (1985).
3. H. Kitamura, Rev. Sci. Instrum. 66, 2007 (1995).
4. H. Kitamura, J. Synchrotron Radiat. 7, 121 (2000).
5. These devices include ULSIs, magnetic memory devices, organic electroluminescent devices, and spin electronic devices.
6. K. Tamasaku, Y. Tanaka, M. Yabashi, H. Yamazaki, N. Kawamura, M. Suzuki, and T. Ishikawa, Nucl. Instrum. Methods Phys. Res. A 467/468, 686 (2001).
7. U. Gelius, B. Wannberg, P. Baltzer, H. Fellner-Feldegg, G. Carlsson, C. G. Johansson, J. Larsson, P. Munger, and G. Vergerfos, J. Electron Spectrosc. Relat. Phenom. 52, 747 (1990).
8. International Technology Roadmap for Semiconductors, 2002 ed. Available from the International Technology Roadmap for Semiconductors web site, http://public.itrs.net/
9. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
10. Y. Morisaki, Y. Sugita, K. Irino, and T. Aoyama, Ext. Abstr. Int. Workshop on Gate Insulator, Tokyo, 2001, p. 184.
11. P. S. Lysaght, P. J. Chen, R. Bergmann, T. Messina, R. W. Murto, and H. R. Huff, J. Non-Cryst. Solids 303, 54 (2002).