Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1267-1270

  Lee, P F ^a   Dai, J Y ^a   Chan, H L W ^a   Choy, C L ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

A. Films; B. Interfaces; C. Dielectric properties; HfO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; EXCIMER LASERS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS CAPACITORS; OPTIMIZATION; PERMITTIVITY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

LEAKAGE CURRENT; REACTION MECHANISM; SILICIDATION; SILICIDE FORMATION;

THIN FILMS;

EID: 4344685270     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.048     Document Type: Conference Paper

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