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Journal of Crystal Growth

Volumn 273, Issue 3-4, 2005, Pages 510-514

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

(6) Lu, J a Aarik, J b Sundqvist, J a Kukli, K b,c Harsta A a Carlsson, J O a

a UPPSALA UNIVERSITY (Sweden)

b UNIVERSITY OF TARTU (Estonia)

c UNIVERSITY OF HELSINKI (Finland)

Author keywords

A1. Electron energy loss spectroscopy; A3. Atomic layer deposition; B1. HfO2; B1. Silicon oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; PERMITTIVITY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); BAND GAP; GATE DIELECTRICS; INTERFACIAL LAYER;

HAFNIUM COMPOUNDS;

EID: 10644265977 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.064 Document Type: Article

Times cited : (48)

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