Electron spectroscopic analysis of the SiO2/Si system and correlation with metal-oxide-semiconductor device characteristics

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 6653-6713

  Iwata, Seiichi ^a   Ishizaka, Akitoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; IONS; MOS DEVICES; RADIATION EFFECTS; SILICA; SILICON; SODIUM; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; CARRIER TRAPS; CHEMICAL SHIFT; ELECTRIC CHARGING; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; MOS DEVICE CHARACTERISTICS; OXIDE THICKNESS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030151904     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362676     Document Type: Review

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