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Volumn 99, Issue 12, 2007, Pages

Proton-induced fixed positive charge at the Si(100)-SiO2 interface

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; INTERFACES (MATERIALS); OXIDATION; SILICA;

EID: 34548714100     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.99.126102     Document Type: Article
Times cited : (26)

References (40)
  • 1
    • 26544473410 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.38.9657
    • K.L. Brower, Phys. Rev. B PRBMDO 0163-1829 38, 9657 (1988). 10.1103/PhysRevB.38.9657
    • (1988) Phys. Rev. B , vol.38 , pp. 9657
    • Brower, K.L.1
  • 2
    • 36449003730 scopus 로고
    • APPLAB 0003-6951 10.1063/1.112696
    • J.M.M. de Nijs, Appl. Phys. Lett. 65, 2428 (1994). APPLAB 0003-6951 10.1063/1.112696
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 2428
    • De Nijs, J.M.M.1
  • 5
    • 0001035776 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.80.5176
    • V.V. Afanasev A. Stesmans Phys. Rev. Lett. 80, 5176 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.80.5176
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 5176
    • Afanasev, V.V.1    Stesmans, A.2
  • 6
    • 0035843263 scopus 로고    scopus 로고
    • EULEEJ 0295-5075 10.1209/epl/i2001-00142-5
    • V.V. Afanasev and A. Stesmans, Europhys. Lett. 53, 233 (2001). EULEEJ 0295-5075 10.1209/epl/i2001-00142-5
    • (2001) Europhys. Lett. , vol.53 , pp. 233
    • Afanasev, V.V.1    Stesmans, A.2
  • 7
    • 0000775116 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.116674
    • W.L. Warren, Appl. Phys. Lett. 68, 2993 (1996). APPLAB 0003-6951 10.1063/1.116674
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2993
    • Warren, W.L.1
  • 9
    • 0345072493 scopus 로고    scopus 로고
    • MSBTEK 0921-5107 10.1016/S0921-5107(98)00275-X
    • V.V. Afanasev and A. Stesmans, Mater. Sci. Eng. B 58, 56 (1999). MSBTEK 0921-5107 10.1016/S0921-5107(98)00275-X
    • (1999) Mater. Sci. Eng. B , vol.58 , pp. 56
    • Afanasev, V.V.1    Stesmans, A.2
  • 10
    • 20344388361 scopus 로고
    • JESOAN 0013-4651 10.1149/1.2426565
    • B.E. Deal, J. Electrochem. Soc. 114, 266 (1967); JESOAN 0013-4651 10.1149/1.2426565
    • (1967) J. Electrochem. Soc. , vol.114 , pp. 266
    • Deal, B.E.1
  • 13
    • 79956026068 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.1504879
    • S.N. Rashkeev, Appl. Phys. Lett. 81, 1839 (2002). APPLAB 0003-6951 10.1063/1.1504879
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 1839
    • Rashkeev, S.N.1
  • 14
    • 28844497064 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.95.187402
    • F. Giustino and A. Pasquarello, Phys. Rev. Lett. 95, 187402 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.187402
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 187402
    • Giustino, F.1    Pasquarello, A.2
  • 15
    • 0037596665 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.90.186101
    • A. Bongiorno, Phys. Rev. Lett. 90, 186101 (2003); PRLTAO 0031-9007 10.1103/PhysRevLett.90.186101
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 186101
    • Bongiorno, A.1
  • 17
    • 23244460838 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.46.6671
    • J.P. Perdew, Phys. Rev. B PRBMDO 0163-1829 46, 6671 (1992). 10.1103/PhysRevB.46.6671
    • (1992) Phys. Rev. B , vol.46 , pp. 6671
    • Perdew, J.P.1
  • 18
    • 0000574699 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.53.1180
    • A. Dal Corso, Phys. Rev. B PRBMDO 0163-1829 53, 1180 (1996). 10.1103/PhysRevB.53.1180
    • (1996) Phys. Rev. B , vol.53 , pp. 1180
    • Dal Corso, A.1
  • 19
    • 20544463457 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.41.7892
    • D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 41, 7892 (1990). 10.1103/PhysRevB.41.7892
    • (1990) Phys. Rev. B , vol.41 , pp. 7892
    • Vanderbilt, D.1
  • 20
    • 4243606192 scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.55.2471
    • R. Car and M. Parrinello, Phys. Rev. Lett. 55, 2471 (1985); PRLTAO 0031-9007 10.1103/PhysRevLett.55.2471
    • (1985) Phys. Rev. Lett. , vol.55 , pp. 2471
    • Car, R.1    Parrinello, M.2
  • 21
    • 4143083217 scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.69.1982
    • A. Pasquarello, Phys. Rev. Lett. 69, 1982 (1992); PRLTAO 0031-9007 10.1103/PhysRevLett.69.1982
    • (1992) Phys. Rev. Lett. , vol.69 , pp. 1982
    • Pasquarello, A.1
  • 22
    • 34247648401 scopus 로고
    • PRBMDO 0163-1829 (10.1103/PhysRevB.47.10142
    • K. Laasonen, Phys. Rev. B 47, 10142 PRBMDO 0163-1829 (1993); 10.1103/PhysRevB.47.10142
    • (1993) Phys. Rev. B , vol.47 , pp. 10142
    • Laasonen, K.1
  • 23
    • 34548709070 scopus 로고    scopus 로고
    • we used the implementation in the Quantum-Espresso package
    • we used the implementation in the Quantum-Espresso package, http://www.democritos.it.
  • 24
    • 5244283812 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.39.10791
    • C.G. Van de Walle, Phys. Rev. B 39, PRBMDO 0163-1829 10791 (1989). 10.1103/PhysRevB.39.10791
    • (1989) Phys. Rev. B , vol.39 , pp. 10791
    • Van De Walle, C.G.1
  • 25
    • 0034451168 scopus 로고    scopus 로고
    • IETNAE 0018-9499 10.1109/23.903763
    • S.T. Pantelides, IEEE Trans. Nucl. Sci. 47, 2262 (2000). IETNAE 0018-9499 10.1109/23.903763
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2262
    • Pantelides, S.T.1
  • 26
    • 19944422758 scopus 로고    scopus 로고
    • MIENEF 0167-9317 10.1016/j.mee.2005.04.082
    • J. Godet and A. Pasquarello, Microelectron. Eng. 80, 288 (2005). MIENEF 0167-9317 10.1016/j.mee.2005.04.082
    • (2005) Microelectron. Eng. , vol.80 , pp. 288
    • Godet, J.1    Pasquarello, A.2
  • 30
    • 33750079023 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.97.155901
    • J. Godet and A. Pasquarello, Phys. Rev. Lett. 97, 155901 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.155901
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 155901
    • Godet, J.1    Pasquarello, A.2
  • 31
    • 0034298157 scopus 로고    scopus 로고
    • IETDAI 0018-9383 10.1109/16.870547
    • C.G. Van de Walle and B.R. Tuttle, IEEE Trans. Electron Devices 47, 1779 (2000); in n-type Si, H- is the stable H form and forms a neutral complex with a donor. IETDAI 0018-9383 10.1109/16.870547
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 1779
    • Van De Walle, C.G.1    Tuttle, B.R.2
  • 32
    • 0027642589 scopus 로고
    • MIENEF 0167-9317 10.1016/0167-9317(93)90131-N
    • J. Krauser, Microelectron. Eng. 22, 65 (1993). MIENEF 0167-9317 10.1016/0167-9317(93)90131-N
    • (1993) Microelectron. Eng. , vol.22 , pp. 65
    • Krauser, J.1
  • 33
    • 0034670809 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.62.R16326
    • A. Bongiorno and A. Pasquarello, Phys. Rev. B 62, PRBMDO 0163-1829 R16326 (2000). 10.1103/PhysRevB.62.R16326
    • (2000) Phys. Rev. B , vol.62 , pp. 16326
    • Bongiorno, A.1    Pasquarello, A.2
  • 34
  • 35
    • 0000789191 scopus 로고
    • PRBMDO 0163-1829 (10.1103/PhysRevB.35.8223
    • J.K. Rudra and W.B. Fowler, Phys. Rev. B 35, 8223 PRBMDO 0163-1829 (1987); 10.1103/PhysRevB.35.8223
    • (1987) Phys. Rev. B , vol.35 , pp. 8223
    • Rudra, J.K.1    Fowler, W.B.2
  • 36
    • 0000734410 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.78.887
    • M. Boero, Phys. Rev. Lett. 78, 887 (1997). PRLTAO 0031-9007 10.1103/PhysRevLett.78.887
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 887
    • Boero, M.1
  • 38
    • 33750526881 scopus 로고    scopus 로고
    • EDLEDZ 0741-3106 10.1109/LED.2006.883565
    • D.S. Ang and S. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 27, 914 (2006). 10.1109/LED.2006.883565
    • (2006) IEEE Electron Device Lett. , vol.27 , pp. 914
    • Ang, D.S.1    Wang, S.2
  • 39
    • 0021519639 scopus 로고
    • JAPIAU 0021-8979 10.1063/1.333819
    • E.H. Poindexter, J. Appl. Phys. 56, 2844 (1984). JAPIAU 0021-8979 10.1063/1.333819
    • (1984) J. Appl. Phys. , vol.56 , pp. 2844
    • Poindexter, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.