Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 182-185

  Aresu, S ^a   De Ceuninck, W ^a,b   Degraeve, R ^b   Kaczer, B ^b   Knuyt, G ^a   De Schepper, L ^a  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

Author keywords

Charge trapping; CVS; High resolution measurement; SILC; SiO2

Indexed keywords

CURRENT DENSITY; DATA ACQUISITION; DEGRADATION; ELECTRIC POTENTIAL; ELECTRON TRAPS; MOS CAPACITORS; SILICA; STRESS ANALYSIS;

CHARGE TRAPPING; CVS; HIGH-RESOLUTION MEASUREMENT; SILC; SIO2;

ULTRATHIN FILMS;

EID: 19944401566     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.065     Document Type: Conference Paper

References (6)

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