Plasma etching of Hf-based high- k thin films. Part I. Effect of complex ions and radicals on the surface reactions

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 2, 2009, Pages 209-216

  Martin, Ryan M ^a,b   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON TRICHLORIDES; BORON-CONTAINING; COMPLEX IONS; DOMINANT SPECIES; ETCH PRODUCTS; ETCH RATES; HAFNIUM ALUMINATES; HIGH-K GATE OXIDES; ION ENERGIES; PLASMA COMPOSITIONS; POWER LEDS;

BORON; BORON COMPOUNDS; CHEMICAL ANALYSIS; CHLORINE COMPOUNDS; HAFNIUM; HAFNIUM COMPOUNDS; HIGH PRESSURE EFFECTS; IONS; OXYGEN; OZONE WATER TREATMENT; PLASMA ETCHING; SURFACE REACTIONS; THIN FILMS;

PLASMAS;

EID: 61449214187     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3065679     Document Type: Article

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