Reactive ion etching technique for via-hole applications in thick GaAs wafers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 312-317

  Wang, Chih Cheng ^c   Lin, Yu Lu ^c   Lin, Shun Kuan ^c   Li, Chun Sheng ^c   Huang, Hou Kuei ^c   Wu, Chang Luen ^a   Chang, Chian Sern ^a   Wang, Yeong Her ^b  

^a Transcom Inc   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; DRY ETCHING; FIELD EFFECT TRANSISTORS; MICROWAVES; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

ETCHING PARAMETERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT APPLICATIONS; REACTIVE GAS PRESSURES;

REACTIVE ION ETCHING;

EID: 34047136139     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2437157     Document Type: Article

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