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Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 3, 2009, Pages

Fundamental steps towards interface amorphization during silicon oxidation: Density functional theory calculations

(5) Hemeryck, A a Esteve A a Richard, N b Djafari Rouhani, M a,c Chabal, Y J d

a UNIVERSITÉ DE TOULOUSE (France)

b CEA DAM DIF (France)

c UNIVERSITÉ PAUL SABATIER (France)

d The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 60349107418 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.79.035317 Document Type: Article

Times cited : (19)

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