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Volumn 91, Issue 14, 2003, Pages

Oxidation of the Si(001) surface: Lateral growth and formation of P60 centers

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ALGORITHMS; ATOMS; CALCULATIONS; CHEMICAL BONDS; MOLECULAR DYNAMICS; MONOLAYERS; OXIDATION; OXYGEN; PROBABILITY DENSITY FUNCTION; SURFACES;

EID: 0242581725     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (59)

References (24)
  • 11
    • 0000835276 scopus 로고    scopus 로고
    • Phys. Rev. Lett. 81, 5936 (1998)
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 5936
  • 12
    • 0033327307 scopus 로고    scopus 로고
    • Surf. Sci. 438, 102 (1999).
    • (1999) Surf. Sci. , vol.438 , pp. 102
  • 22
    • 0242608035 scopus 로고    scopus 로고
    • note; (private communication)
    • b centers is estimated to be 4 nm and the nearest distance is around 2 nm [S. Yamasaki and W. Futako (private communication)].
    • Yamasaki, S.1    Futako, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.