Oxidation of Si(0 0 1)-2 × 1

Surface Science

Volumn 478, Issue 1-2, 2001, Pages

  Pi, T W ^a   Wen, J F ^b   Ouyang, C P ^a   Wu, R T ^a   Wertheim, G K ^c  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c Woodland Consulting   (United States)

Author keywords

Growth; Oxidation; Photoelectron spectroscopy; Silicon oxides

Indexed keywords

FILM GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); NUCLEATION; OXIDATION; OXIDES; PHOTOELECTRON SPECTROSCOPY; SURFACE PHENOMENA; THICK FILMS;

HIGH TEMPERATURE OXIDATION;

SEMICONDUCTING SILICON;

EID: 0035341752     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00968-2     Document Type: Article

References (16)