Determination of the source of two extra components in Si 2p photoelectron spectra of the SiO2/Si(1 0 0 ) interface

Journal of Electron Spectroscopy and Related Phenomena

Volumn 144-147, Issue , 2005, Pages 405-408

  Dreiner, S ^a,b   Schurmann M ^a   Krause, M ^a   Berges, U ^a   Westphal, C ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Interface; Photoelectron; Ultrathin silicon oxide

Indexed keywords

CURVE FITTING; ELECTROMAGNETIC WAVE DIFFRACTION; MATHEMATICAL MODELS; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON; ULTRATHIN FILMS;

CORE-LEVEL PHOTOEMISSION SPECTROSCOPY; INTERFACE STRUCTURE; OXIDATION STATES; ULTRATHIN SILICON OXIDE;

INTERFACES (MATERIALS);

EID: 17544371723     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2005.01.120     Document Type: Conference Paper

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