Discrete dopant fluctuated 20nm/15nm-gate planar CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 208-209

  Yang, Fu Liang ^a   Hwang, Jiunn Ren ^a   Chen, Hung Ming ^a   Shen, Jeng Jung ^a   Yu, Shao Ming ^b   Li, Yiming ^b   Tang, Denny D ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

RANDOM DOPANTS; VLSI TECHNOLOGIES;

EID: 47249124448     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339695     Document Type: Conference Paper

References (4)

1. F.-L. Yang, et al., Proc. of IEEE CICC 2006, pp. 691.
2. A. Asenov, et al., IEEE Trans. Electron Devices, 2003, pp. 1837.
3. H. Fukutome, et al., IEDM Tech. Digest, 2006, pp. 281.
4. Y. Li, et al., IEEE Trans. Nanotech., 2005, pp. 510.