Influence of metal gate materials and processing on planar CMOS device characteristics with high-k gate dielectrics

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 185-188

  Majhi, P ^b   Young, C ^a   Bersuker, G ^a   Wen, H C ^a   Brown, G A ^a   Foran, B ^a   Choi, R ^a   Zeitzoff, P M ^a   Huff, H R ^a  

^a SEMATECH   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS DEVICES; HIGH-K GATE DIELECTRICS; INTERFACIAL OXIDE LAYERS; METAL GATE MATERIALS;

DIELECTRIC MATERIALS; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; TANTALUM; TITANIUM NITRIDE;

CMOS INTEGRATED CIRCUITS;

EID: 17744375016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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