Impact of scattering in 'atomistic' device simulations

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 733-739

  Alexander, C ^a   Brown, A R ^a   Watling, J R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Atomistic; Drift diffusion; Monte Carlo; Trapped charge

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); ELECTROSTATICS; IMPACT IONIZATION; IMPURITIES; MONTE CARLO METHODS; SCATTERING; THRESHOLD VOLTAGE;

ATOMISTIC DEVICES; DRIFT-DIFFUSION; ENSEMBLE MONTE CARLO (EMC) TECHNIQUE; TRAPPED CHARGE;

CMOS INTEGRATED CIRCUITS;

EID: 14844293155     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.012     Document Type: Conference Paper

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