Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs

IEEE Transactions on Nanotechnology

Volumn 4, Issue 3, 2005, Pages 369-373

  Tsutsui, Gen ^a   Saitoh, Masumi ^a   Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Quantum confinement effects; Silicon on insulator (SOI) thickness fluctuation; Substrate bias; Threshold voltage variation; Ultra thin body (UTB) SOI MOSFET

Indexed keywords

FIELD EFFECT TRANSISTORS; LOGIC GATES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE; VLSI CIRCUITS;

MOSFET; QUANTUM CONFINEMENT EFFECTS; SILICON-ON-INSULATOR (SOI) THICKNESS FLUCTUATION; SOI; SUBSTRATE BIAS; THRESHOLD VOLTAGE VARIATION; ULTRA-THIN BODY (UTB);

MOSFET DEVICES;

EID: 20344366540     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.846913     Document Type: Conference Paper

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