Photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in Ar or Ar+ H2 plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 1, 2009, Pages 101-108

  Heng, C L ^a   Chelomentsev, E ^a   Zalloum, O H Y ^a   Wojcik, J ^a   Mascher, P ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL PROPERTIES; COMPOSITE FILMS; EMISSION SPECTROSCOPY; ENERGY TRANSFER; ERBIUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROGEN; INFRARED SPECTROSCOPY; LIGHT EMISSION; LUMINESCENCE; MAGNETRONS; OXIDE FILMS; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICON; SPECTROSCOPIC ANALYSIS;

AMBIENTS; ANNEALING BEHAVIORS; COMPOSITE TARGETS; DOPED SI; ENERGY TRANSFER PROCESSES; FOURIER TRANSFORM INFRARED; H2 PLASMAS; PL INTENSITIES; PL PROPERTIES; POSTDEPOSITION ANNEALING; SI OXIDES;

ARGON;

EID: 58149483965     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043465     Document Type: Article

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