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Thin Solid Films

Volumn 402, Issue 1-2, 2002, Pages 154-161

On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films

(4) Alayo, M I a Pereyra, I a Scopel, W L a Fantini, M C A a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

Dielectrics; Plasma processing and deposition; Silicon oxynitride

Indexed keywords

AMORPHOUS SILICON; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; NITROGEN COMPOUNDS; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS;

GAS PRECURSORS; LIGHT EMITTING DEVICES;

DIELECTRIC FILMS;

EID: 0036145898 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01685-6 Document Type: Article

Times cited : (161)

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