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Volumn 79, Issue 4-6, 2004, Pages 1485-1488
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The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL LASERS;
COMPLEXATION;
CRYSTALLINE MATERIALS;
DOPING (ADDITIVES);
LASER ABLATION;
MOLECULAR BEAM EPITAXY;
OPTIMIZATION;
OXYGEN;
PHOTOLUMINESCENCE;
PRESSURE EFFECTS;
PULSED LASER DEPOSITION;
SILICON;
X RAY PHOTOELECTRON SPECTROSCOPY;
BAND GAP ENERGIES;
DECONVOLUTION;
PARITY-FORBIDDEN TRANSITION;
SILICON-RICH SILICON OXIDE (SRSO) FILMS;
ERBIUM;
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EID: 4344680539
PISSN: 09478396
EISSN: None
Source Type: Journal
DOI: 10.1007/s00339-004-2826-4 Document Type: Conference Paper |
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Times cited : (6)
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References (14)
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