Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1094-1098

  Pi, X D ^a   Coleman, P G ^a   Harding, R ^b   Davies, G ^b   Gwilliam, R M ^c   Sealy, B J ^c  

^a University of Bath ^*  (United Kingdom)

^b KING'S COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Interface; Positron annihilation; Silicon dioxide; Silicon nanocrystal

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTAL GROWTH; DIFFUSION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); NITROGEN; OXIDATION; OXYGEN; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; QUANTUM THEORY; SHRINKAGE; SILICA; SILICON; STRESS ANALYSIS;

QUANTUM CONFINEMENT; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0346055256     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.180     Document Type: Conference Paper

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