On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide

Journal of Applied Physics

Volumn 103, Issue 2, 2008, Pages

  Heng, C L ^a   Zalloum, O H Y ^a   Wojcik, J ^a   Roschuk, T ^a   Mascher, P ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ERBIUM; NANOCLUSTERS; PHOTOLUMINESCENCE; SILICON COMPOUNDS;

ANNEALING TEMPERATURE; OXYGEN BONDS; SILICON OXYNITRIDES;

OXIDE FILMS;

EID: 38849098335     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829809     Document Type: Article

References (45)

1. A. J. Kenyon, P. F. Trwoga, M. Federighi, and C. W. Pitt, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/6/21/007 6, L319 (1994).
2. Physica E, Vol. 16, Issues 3-4 (2003).
3. G. Franzó, S. Boninelli, D. Pacifici, F. Priolo, F. Iacona, and C. Bongiorno, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1579555 82, 3871 (2003).
4. C. Y. Chen, W. D. Chen, S. F. Song, Z. J. Xu, X. B. Liao, G. H. Li, and K. Ding, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1615691 94, 5599 (2003).
5. A. Janotta, M. Schmidt, R. Janssen, and M. Stutzmann, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.165207 68, 165207 (2003).
6. D. Kuritsyn, A. Kozanecki, H. Przybylińska, and W. Jantsch, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1627483 83, 4160 (2003).
7. M. J. A. de Dood, J. Knoester, A. Tip, and A. Polman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.115102 71, 115102 (2005).
8. See, for example, Silicon Photonics, edited by, L. Pavesi, and, D. J. Lockwood, (Springer, Berlin, 2004); R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1307 4, 143 (2005).
9. A. R. Wilkinson and R. G. Elliman, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1789265 96, 4018 (2004).
10. D. Comedi, O. H. Y. Zalloum, and P. Mascher, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2135382 87, 213110 (2005).
11. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1998).
12. F. Gourbilleau, P. Choppinet, C. Dufour, M. Levalois, R. Madelon, J. Vicens, R. Rizk, and M. Prassas, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/j.mseb.2003.08.013 105, 44 (2003).
13. X. D. Pi, O. H. Y. Zalloum, J. Wojcik, A. P. Knights, P. Mascher, A. D. W. Todd, and P. J. Simpson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1894600 97, 096108 (2005).
14. C. L. Heng, O. H. Y. Zalloum, T. Roschuk, D. Blakie, J. Wojcik, and P. Mascher, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2735815 10, K20 (2007).
15. O. H. Y. Zalloum, M. Flynn, T. Roschuk, J. Wojcik, E. Irving, and P. Mascher, Rev. Sci. Instrum. RSINAK 0034-6748 10.1063/1.2173030 77, 023907 (2006).
16. L. Rebohle, J. von Borany, H. Fröb, and W. Skorupa, Appl. Phys. B: Lasers Opt. APBOEM 0946-2171 10.1007/s003400050084 71, 131 (2000).
17. A. Polman, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366265 82, 1 (1997).
18. A. R. Silin, L. N. Skuja, and A. V. Shendrik, Fiz. Khim. Stekla FKSTD5 0132-6651 4, 405 (1978).
19. L. N. Skuja and A. R. Silin, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.2210560149 56, K11 (1979).
20. A. Polman, D. C. Jacobson, D. J. Eaglesham, R. C. Kistler, and J. M. Poate, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.349234 70, 3778 (1991).
21. M. Wojdak, M. F. M. Klik, O. B. Gusev, T. Gregorkiewicz, G. F. D. Pacifici, F. Priolo, and F. Iacona, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.233315 69, 233315 (2004).
22. F. Gourbilleau, M. Levalois, C. Dufour, J. Vicens, and R. Rizk, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1655680 95, 3717 (2004).
23. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1664026 95, 3723 (2004).
24. X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, M. H. Liu, D. Y. Dai, and W. D. Song, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1569033 93, 6311 (2003).
25. J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 175-177, 490 (2001).
26. G.-R. Lin, C.-J. Lin, C.-K. Lin, L.-J. Chou, and Y.-L. Chueh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1886274 97, 094306 (2005).
27. D. B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.2412 ED-35, 25 (1988).
28. M. L. Green, T. Sorsch, L. C. Feldman, W. N. Lennard, E. P. Gusev, E. Garfunkel, H. C. Lu, and T. Gustafsson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120235 71, 2978 (1997).
29. J. Zhao, Y. H. Yu, D. S. Mao, Z. X. Lin, B. Y. Jiang, G. Q. Yang, X. H. Liu, and Shichang Zou, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/S0168-583X(98)00692-2 148, 1002 (1999).
30. M. Fujii, K. Imakita, K. Watanabe, and S. Hayashi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1631072 95, 272 (2004).
31. H. Nishikawa, R. Nakamura, R. Tohmon, Y. Ohki, Y. Sakurai, K. Nagasawa, and Y. Hama, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.7828 41, 7828 (1990).
32. G. Lucovsky, J. Yang, S. S. Chao, J. E. Tyler, and W. Czubatyj, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.29.2302 29, 2302 (1984).
33. D. V. Tsu, G. Lucovsky, and B. N. Davidson, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.40.1795 40, 1795 (1989).
34. G. G. Salgado, T. D. Becerril, H. J. Santiesteban, and E. R. Andŕs, Opt. Mater. (Amsterdam, Neth.) OMATET 0925-3467 29, 51 (2006).
35. A. J. Steckl, J. Xu, H. C. Mogul, and S. M. Prokes, J. Electrochem. Soc. JESOAN 0013-4651 142, L69 (1995).
36. D. Comedi, O. H. Y. Zalloum, E. A. Irving, J. Wojcik, and P. Mascher, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2177227 24, 817 (2006).
37. X.-W. Du, Y.-W. Lu, J.-P. Liu, and J. Sun, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/j.apsusc.2005.06.032 252, 4161 (2006).
38. Z. Yu, M. Aceves-Mijares, E. Quiroga, R. Lopez-Estopier, J. Carrillo, and C. Falcony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2210667 100, 013524 (2006).
39. M. I. Alayo, I. Pereyra, W. L. Scopel, and M. C. A. Fantini, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(01)01685-6 402, 154 (2002).
40. T. Morioka, S. Kimura, N. Tsuda, C. Kaito, Y. Saito, and C. Koike, Mon. Not. R. Astron. Soc. MNRAA4 0035-8711 10.1046/j.1365-8711.1998.01743.x 299, 78 (1998).
41. Y. Xin, Z. X. Huang, Y. Shi, L. Pu, R. Zhang, and Y. D. Zheng, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/j.physe.2005.07.007 30, 41 (2005).
42. M. Bedjaoui, B. Despax, M. Caumont, and C. Bonafos, Mater. Sci. Eng., B MSBTEK 0921-5107 124-125, 508 (2005).
43. S. J. Patil and S. A. Gangal, J. Micromech. Microeng. JMMIEZ 0960-1317 10.1088/0960-1317/15/10/023 15, 1956 (2005).
44. Ruofeng Guo, Y. Kurata, T. Inokuma, and S. Hasegawa, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/j.jnoncrysol.2005.07.015 351, 3006 (2005).
45. D. Comedi, O. H. Y. Zalloum, J. Wojcik, and P. Mascher, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 10.1109/JSTQE.2006.885388 12, 1561 (2006).