Feature-scale model of Si etching in SF 6/O 2 plasma and comparison with experiments

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 5, 2005, Pages 1430-1439

  Belen, Rodolfo Jun ^a   Gomez, Sergi ^a   Cooperberg, David ^b   Kiehlbauch, Mark ^b   Aydil, Eray S ^c  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

KINETIC PARAMETERS; MOLE FRACTION;

ADSORPTION; ANISOTROPY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ETCHING; FREE RADICALS; SILICON; SULFUR COMPOUNDS;

PLASMA DIAGNOSTICS;

EID: 31044434782     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2013317     Document Type: Article

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