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Volumn 24, Issue 6, 2006, Pages 2176-2186
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In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors
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Author keywords
[No Author keywords available]
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Indexed keywords
ETCHING YIELD;
ION INCIDENCE ANGLE;
ISOTROPIC PLASMA ETCHING;
PLASMA REACTORS;
BINARY MIXTURES;
ETCHING;
REACTION KINETICS;
SCANNING ELECTRON MICROSCOPY;
SULFUR COMPOUNDS;
PLASMA DEVICES;
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EID: 33750949603
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2362725 Document Type: Article |
Times cited : (16)
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References (14)
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