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Volumn 24, Issue 6, 2006, Pages 2176-2186

In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING YIELD; ION INCIDENCE ANGLE; ISOTROPIC PLASMA ETCHING; PLASMA REACTORS;

EID: 33750949603     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2362725     Document Type: Article
Times cited : (16)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.