Effects of SiO2/Si3N4 hard masks on etching properties of metal gates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2689-2694

  Hwang, Wan Sik ^a   Cho, Byung Jin ^a   Chan, Daniel S H ^a   Bliznetsov, Vladimir ^b   Yoo, Won Jong ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GIBBS FREE ENERGY; PLASMAS; POLYSILICON; SILICA; SURFACE ROUGHNESS;

ETCH RATES; ETCHING TIME; METAL OXIDES;

MASKS;

EID: 33845245007     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2382950     Document Type: Article

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