Pattern based prediction for plasma etch

IEEE Transactions on Semiconductor Manufacturing

Volumn 20, Issue 2, 2007, Pages 77-86

  Abrokwah, Kwaku O ^b   Chidambaram, P R ^c   Boning, Duane S ^a,b  

^a IEEE   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Aspect ratio dependent etch (ARDE); Die level variation; Feature level variation; Microloading; Pattern density; Pattern dependency; Reactive ion etch (RIE)

Indexed keywords

ASPECT RATIO DEPENDENT ETCH (ARDE); DIE LEVEL VARIATION; FEATURE LEVEL VARIATION; MICROLOADING; PATTERN DENSITY; PATTERN DEPENDENCY;

INTEGRATED CIRCUITS; MATHEMATICAL MODELS; REACTIVE ION ETCHING;

PLASMA ETCHING;

EID: 34248209713     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2007.896638     Document Type: Conference Paper

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