-
1
-
-
0039124420
-
Transport phenomena in epitaxy systems
-
Hurl D.T.J. Amsterdam: Elsevier
-
Jensen KF. Transport phenomena in epitaxy systems. Hurl DTJ. Handbook of Crystal Growth. 1994;543-599 Elsevier, Amsterdam.
-
(1994)
Handbook of Crystal Growth
, pp. 543-599
-
-
Jensen, K.F.1
-
2
-
-
0002001069
-
Chemical vapor deposition processes
-
Meyyappan M. Norwood, MA: Artech House
-
Kleijn CR. Chemical vapor deposition processes. Meyyappan M. Computational Modeling in Semiconductor Processing. 1995;97-229 Artech House, Norwood, MA.
-
(1995)
Computational Modeling in Semiconductor Processing
, pp. 97-229
-
-
Kleijn, C.R.1
-
4
-
-
0001169034
-
Free molecular transport and deposition in long rectangular trenches
-
Cale TS, Raupp GB, Gandy TH. Free molecular transport and deposition in long rectangular trenches. J Appl Phys. 68:1990;3645-3652.
-
(1990)
J Appl Phys
, vol.68
, pp. 3645-3652
-
-
Cale, T.S.1
Raupp, G.B.2
Gandy, T.H.3
-
7
-
-
0031099825
-
Microscopic aspects of homoepitaxial growth
-
of outstanding interest. A linking of DFT calculations to KMC simulations of Al on Al(111) is demonstrated. The ab initio calculations based on DFT were used to calculate diffusion barriers on the surface and fed to KMC simulations, which predicted island shapes during growth. This study is notable due to the linking between quantum calculations and surface morphology predictions.
-
Ruggerone P, Kley A, Scheffler M. Microscopic aspects of homoepitaxial growth. of outstanding interest Prog Surf Sci. 54:1997;331-340 A linking of DFT calculations to KMC simulations of Al on Al(111) is demonstrated. The ab initio calculations based on DFT were used to calculate diffusion barriers on the surface and fed to KMC simulations, which predicted island shapes during growth. This study is notable due to the linking between quantum calculations and surface morphology predictions.
-
(1997)
Prog Surf Sci
, vol.54
, pp. 331-340
-
-
Ruggerone, P.1
Kley, A.2
Scheffler, M.3
-
8
-
-
0001697901
-
Bridging the length and time scale; From ab initio electronic structure calculations to macroscopic proportions
-
of outstanding interest
-
Ruggerone P, Kley A, Scheffler A. Bridging the length and time scale; from ab initio electronic structure calculations to macroscopic proportions. of outstanding interest Comment Condens Matter Phys. 1998; Another example of the linking of DFT calculations to KMC simulations in order to predict surface properties from microscopic inputs.
-
(1998)
Comment Condens Matter Phys
-
-
Ruggerone, P.1
Kley, A.2
Scheffler, A.3
-
11
-
-
33751156718
-
Theoretical study of the thermochemistry of molecules in the Si-O-H-C system
-
Ho P, Melius CF. Theoretical study of the thermochemistry of molecules in the Si-O-H-C system. J Phys Chem. 99:1995;2166-2176.
-
(1995)
J Phys Chem
, vol.99
, pp. 2166-2176
-
-
Ho, P.1
Melius, C.F.2
-
12
-
-
0031553344
-
Theoretical study of the thermochemistry of molecules in the Si-B-H-Cl system
-
of special interest. A self-consistent set of thermochemical parameters for ~100 molecules in the Si-B-H-Cl system is obtained using a combination of ab initio electronic structure calculations and empirical corrections. The species include stable and radical species as well as a few transition states.
-
Ho P, Coltrin ME, Melius CF. Theoretical study of the thermochemistry of molecules in the Si-B-H-Cl system. of special interest J Phys Chem A. 101:1997;9470-9488 A self-consistent set of thermochemical parameters for ~100 molecules in the Si-B-H-Cl system is obtained using a combination of ab initio electronic structure calculations and empirical corrections. The species include stable and radical species as well as a few transition states.
-
(1997)
J Phys Chem a
, vol.101
, pp. 9470-9488
-
-
Ho, P.1
Coltrin, M.E.2
Melius, C.F.3
-
13
-
-
0000646160
-
Theoretical study of the thermochemistry of molecules in the Si-O-H system
-
Allendorf MD, Melius CF, Ho P, Zachariah MR. Theoretical study of the thermochemistry of molecules in the Si-O-H system. J Phys Chem. 99:1995;15285-15293.
-
(1995)
J Phys Chem
, vol.99
, pp. 15285-15293
-
-
Allendorf, M.D.1
Melius, C.F.2
Ho, P.3
Zachariah, M.R.4
-
14
-
-
0031362497
-
Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy
-
of special interest. Reviews the application of ab initio molecular orbital techniques and DFT methods to CVD, with emphasis on organometallic precursors.
-
Simka H, Willis BG, Lengyel I, Jensen KF. Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy. of special interest Prog Cryst Growth Charact. 35:1997;117-149 Reviews the application of ab initio molecular orbital techniques and DFT methods to CVD, with emphasis on organometallic precursors.
-
(1997)
Prog Cryst Growth Charact
, vol.35
, pp. 117-149
-
-
Simka, H.1
Willis, B.G.2
Lengyel, I.3
Jensen, K.F.4
-
15
-
-
0011709019
-
A three dimensional model for low pressure chemical vapor deposition step coverage in trenches and vias
-
IslamRaja MM, Capelli MA, McVittie JP, Saraswat KC. A three dimensional model for low pressure chemical vapor deposition step coverage in trenches and vias. J Appl Phys. 70:1991;7137-7140.
-
(1991)
J Appl Phys
, vol.70
, pp. 7137-7140
-
-
Islamraja, M.M.1
Capelli, M.A.2
McVittie, J.P.3
Saraswat, K.C.4
-
16
-
-
0026170942
-
Modeling and optimization of the step coverage of tungsten LPCVD in trenches and contact holes
-
Hasper A, Holleman J, Middelhoek J, Kleijn CR, Hoogendoorn CJ. Modeling and optimization of the step coverage of tungsten LPCVD in trenches and contact holes. J Electrochem Soc. 138:1991;1728-1738.
-
(1991)
J Electrochem Soc
, vol.138
, pp. 1728-1738
-
-
Hasper, A.1
Holleman, J.2
Middelhoek, J.3
Kleijn, C.R.4
Hoogendoorn, C.J.5
-
17
-
-
0000108193
-
Multiscale modeling of CVD processes
-
of outstanding interest. Addresses the CVD microloading problem with a self-consistent multiscale model of species transport. Employs a continuum reactor scale model and Monte Carlo models of all scales where the continuum equations fail. This is an example of linked simulation over patterns of trenches and vias.
-
Rodgers ST, Jensen KF. Multiscale modeling of CVD processes. of outstanding interest J Appl Phys. 83:1998;524-530 Addresses the CVD microloading problem with a self-consistent multiscale model of species transport. Employs a continuum reactor scale model and Monte Carlo models of all scales where the continuum equations fail. This is an example of linked simulation over patterns of trenches and vias.
-
(1998)
J Appl Phys
, vol.83
, pp. 524-530
-
-
Rodgers, S.T.1
Jensen, K.F.2
-
18
-
-
0031276392
-
A multiscale simulator for low pressure chemical vapor deposition
-
of special interest. Presents an accurate statement of the microloading problem during CVD and the need for a multiscale solution strategy. Also presents an asymptotic analysis technique consistent with a continuum representation of species transport.
-
Gobbert M, Merchant TP, Borucki LJ, Cale TS. A multiscale simulator for low pressure chemical vapor deposition. of special interest J Electrochem Soc. 114:1997;3945-3951 Presents an accurate statement of the microloading problem during CVD and the need for a multiscale solution strategy. Also presents an asymptotic analysis technique consistent with a continuum representation of species transport.
-
(1997)
J Electrochem Soc
, vol.114
, pp. 3945-3951
-
-
Gobbert, M.1
Merchant, T.P.2
Borucki, L.J.3
Cale, T.S.4
-
19
-
-
0000020691
-
A level set approach to a unified model for etching, deposition and lithography I: Algorithims and two-dimensional simulations
-
Adalsteinsson D, Sethian JA. A level set approach to a unified model for etching, deposition and lithography I: algorithims and two-dimensional simulations. J Comput Phys. 120:1995;128-144.
-
(1995)
J Comput Phys
, vol.120
, pp. 128-144
-
-
Adalsteinsson, D.1
Sethian, J.A.2
-
21
-
-
0001039797
-
Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion
-
Singh VK, Shaqfeh ESG, McVittie JP. Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion. J Vac Sci Technol B. 10:1992;1091-1104.
-
(1992)
J Vac Sci Technol B
, vol.10
, pp. 1091-1104
-
-
Singh, V.K.1
Shaqfeh, E.S.G.2
McVittie, J.P.3
-
22
-
-
21344483042
-
Simulation of surface topography evolution during plasma etching by the method of characteristics
-
Arnold JC, Sawain HH, Dalvie M. Simulation of surface topography evolution during plasma etching by the method of characteristics. J Vac Sci Technol A. 12:1994;620-635.
-
(1994)
J Vac Sci Technol a
, vol.12
, pp. 620-635
-
-
Arnold, J.C.1
Sawain, H.H.2
Dalvie, M.3
-
23
-
-
0001444782
-
Investigation of electron source and ion flux unformity in high plasma density inductively coupled etching tools using two-dimensional modeling
-
Ventzek PLG, Grapperhaus M, Kushner MJ. Investigation of electron source and ion flux unformity in high plasma density inductively coupled etching tools using two-dimensional modeling. J Vac Sci Technol B. 12:1994;3118-3137.
-
(1994)
J Vac Sci Technol B
, vol.12
, pp. 3118-3137
-
-
Ventzek, P.L.G.1
Grapperhaus, M.2
Kushner, M.J.3
-
24
-
-
0002202933
-
Two-dimensional fluid model of high density inductively coupled plasma sources
-
Stewart RA, Vitello P, Graves DB. Two-dimensional fluid model of high density inductively coupled plasma sources. J Vac Sci Technol B. 12:1994;478-485.
-
(1994)
J Vac Sci Technol B
, vol.12
, pp. 478-485
-
-
Stewart, R.A.1
Vitello, P.2
Graves, D.B.3
-
25
-
-
0031187015
-
Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwater and superwater topography
-
of special interest. A sequential model linking strategy applied to a plasma system. The effects of a macroscopic reactor environment on microscale results are shown.
-
Hoekstra RJ, Graperhaus MJ, Kushner MJ. Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwater and superwater topography. of special interest J Vac Sci Technol A. 15:1997;1913-1921 A sequential model linking strategy applied to a plasma system. The effects of a macroscopic reactor environment on microscale results are shown.
-
(1997)
J Vac Sci Technol a
, vol.15
, pp. 1913-1921
-
-
Hoekstra, R.J.1
Graperhaus, M.J.2
Kushner, M.J.3
-
26
-
-
0030218605
-
Review of atomistic simulations of surface diffusion and growth on semiconductors
-
Kaxiras E. Review of atomistic simulations of surface diffusion and growth on semiconductors. Comput Mater Sci. 6:1996;158-172.
-
(1996)
Comput Mater Sci
, vol.6
, pp. 158-172
-
-
Kaxiras, E.1
-
27
-
-
0000341743
-
2 desorption from Si(100)-2 × 1
-
2 desorption from Si which were used as further input into KMC simulations. Interesting is how the combined simulations explain a variety of experimental results, while the use of each simulation technique alone could not explain much of the experimental work in the field.
-
2 desorption from Si which were used as further input into KMC simulations. Interesting is how the combined simulations explain a variety of experimental results, while the use of each simulation technique alone could not explain much of the experimental work in the field.
-
(1997)
Phys Rev B
, vol.55
, pp. 4649-4658
-
-
Radeke, M.R.1
Carter, E.A.2
-
29
-
-
11944256577
-
Iterative minmization techniques for ab initio total-energy calculations - Molecular-dynamics and conjugate gradients
-
Payne MC, Teter MP, Allan DC, Arias TA, Joannopoulos JD. Iterative minmization techniques for ab initio total-energy calculations - molecular-dynamics and conjugate gradients. Rev Mod Phys. 64:1992;1045.
-
(1992)
Rev Mod Phys
, vol.64
, pp. 1045
-
-
Payne, M.C.1
Teter, M.P.2
Allan, D.C.3
Arias, T.A.4
Joannopoulos, J.D.5
-
30
-
-
36449005081
-
Recent progress in computer-aided materials design for compound semiconductors
-
Ito T. Recent progress in computer-aided materials design for compound semiconductors. J Appl Phys. 77:1995;4845-4886.
-
(1995)
J Appl Phys
, vol.77
, pp. 4845-4886
-
-
Ito, T.1
-
31
-
-
0030218595
-
Electronic structure properties of solids
-
Burdett J. Electronic structure properties of solids. J Phys Chem. 100:1996;13263-13274.
-
(1996)
J Phys Chem
, vol.100
, pp. 13263-13274
-
-
Burdett, J.1
-
32
-
-
0000832990
-
Theory of semiconductor surface reconstruction
-
Srivastava GP. Theory of semiconductor surface reconstruction. Rep Prog Phys. 60:1997;561-613.
-
(1997)
Rep Prog Phys
, vol.60
, pp. 561-613
-
-
Srivastava, G.P.1
-
33
-
-
4244088318
-
Structural, dynamical, and electronic-properties of amorphous-silicon - An ab initio molecular-dynamics study
-
Car R, Parrinello M. Structural, dynamical, and electronic-properties of amorphous-silicon - an ab initio molecular-dynamics study. Phys Rev Lett. 60:1988;204-207.
-
(1988)
Phys Rev Lett
, vol.60
, pp. 204-207
-
-
Car, R.1
Parrinello, M.2
-
34
-
-
0000032905
-
Ab initio dynamics of surface chemistry
-
2 desorption and adsorption from Si(100) is used as a case study.
-
2 desorption and adsorption from Si(100) is used as a case study.
-
(1997)
Annu Rev Phys Chem
, vol.48
, pp. 243-270
-
-
Radeke, M.R.1
Carter, E.A.2
-
36
-
-
0001593945
-
Ab initio molecular dynamics study of the desorption of D-2 from Si(100)
-
Gross A, Bockstedte M, Scheffler M. Ab initio molecular dynamics study of the desorption of D-2 from Si(100). Phys Rev Lett. 79:1997;701-704.
-
(1997)
Phys Rev Lett
, vol.79
, pp. 701-704
-
-
Gross, A.1
Bockstedte, M.2
Scheffler, M.3
-
37
-
-
0031075320
-
The GaAs(001)-(2 × 4) surface: Structure, chemistry, and adsorbates
-
of special interest. Ab initio simulations based on DFT for adsorbates on GaAs(001)-(2 × 4) are investigated. An interesting study due to the use of quantum techniques to study surfaces important in MBE and CVD applications of crystal growth. Also, a nice description and comparison of techniques used to study semi-conductor systems.
-
Goringe CM, Clark LJ, Payne MC, Stich I, White JA, Gillan MJ, Sutton AP. The GaAs(001)-(2 × 4) surface: structure, chemistry, and adsorbates. of special interest J Phys Chem B. 101:1997;1498-1509 Ab initio simulations based on DFT for adsorbates on GaAs(001)-(2 × 4) are investigated. An interesting study due to the use of quantum techniques to study surfaces important in MBE and CVD applications of crystal growth. Also, a nice description and comparison of techniques used to study semi-conductor systems.
-
(1997)
J Phys Chem B
, vol.101
, pp. 1498-1509
-
-
Goringe, C.M.1
Clark, L.J.2
Payne, M.C.3
Stich, I.4
White, J.A.5
Gillan, M.J.6
Sutton, A.P.7
-
38
-
-
0001739480
-
Adatom diffusion at GaN (0001) and (000 1) surfaces
-
of special interest. Potential energy surfaces (PES) and GaN were calculated using total-energy DFT calculations with ab initio pseudopotentials. From the PES, the diffusion barriers for Ga and N were determined. As an interesting path for further research, these calculations could be used as inputs into KMC calculations and linked to reactor simulations for GaN CVD growth.
-
Zywietz T, Neugebauer J, Scheffler M. Adatom diffusion at GaN (0001) and (000 1 ) surfaces. of special interest Appl Phys Lett. 73:1998;487-489 Potential energy surfaces (PES) and GaN were calculated using total-energy DFT calculations with ab initio pseudopotentials. From the PES, the diffusion barriers for Ga and N were determined. As an interesting path for further research, these calculations could be used as inputs into KMC calculations and linked to reactor simulations for GaN CVD growth.
-
(1998)
Appl Phys Lett
, vol.73
, pp. 487-489
-
-
Zywietz, T.1
Neugebauer, J.2
Scheffler, M.3
-
39
-
-
0000671263
-
Ab initio quantum and molecular dynamics of the dissociative adsorption of hydrogen on Pd(100)
-
Gross, Scheffler M. Ab initio quantum and molecular dynamics of the dissociative adsorption of hydrogen on Pd(100). Phys Rev B. 57:1998;2493-2500.
-
(1998)
Phys Rev B
, vol.57
, pp. 2493-2500
-
-
Gross1
Scheffler, M.2
-
40
-
-
0000621951
-
Novel diffusion mechanism on the GaAs(001) surface: The roles of adatom-dimer interaction
-
Kley A, Ruggerone P, Scheffler M. Novel diffusion mechanism on the GaAs(001) surface: the roles of adatom-dimer interaction. Phys Rev Lett. 79:1997;5278-5281.
-
(1997)
Phys Rev Lett
, vol.79
, pp. 5278-5281
-
-
Kley, A.1
Ruggerone, P.2
Scheffler, M.3
-
42
-
-
36449008780
-
Simulations of crystal-growth - Effects of atomic beam energy
-
Gilmer GH, Roland C. Simulations of crystal-growth - effects of atomic beam energy. Appl Phys Lett. 65:1994;824-826.
-
(1994)
Appl Phys Lett
, vol.65
, pp. 824-826
-
-
Gilmer, G.H.1
Roland, C.2
-
43
-
-
0042538550
-
Simulations of thin film deposition from atomic and cluster beams
-
Gilmer GH, Roland C, Stock D, Jaraiz M, delaRubia R. Simulations of thin film deposition from atomic and cluster beams. Mater Sci Eng B. 37:1996;1-7.
-
(1996)
Mater Sci Eng B
, vol.37
, pp. 1-7
-
-
Gilmer, G.H.1
Roland, C.2
Stock, D.3
Jaraiz, M.4
Delarubia, R.5
-
44
-
-
35949006368
-
Epitaxy on surfaces vicinal to Si(001). 1. Diffusion of silicon adatoms over the terraces
-
Roland C, Gilmer GH. Epitaxy on surfaces vicinal to Si(001). 1. Diffusion of silicon adatoms over the terraces. Phys Rev B. 46:1992;13428-13436.
-
(1992)
Phys Rev B
, vol.46
, pp. 13428-13436
-
-
Roland, C.1
Gilmer, G.H.2
-
45
-
-
0000246616
-
Epitaxy on surfaces vicinal to Si(001). 2. Growth-properties of Si(001) steps
-
Roland C, Gilmer GH. Epitaxy on surfaces vicinal to Si(001). 2. Growth-properties of Si(001) steps. Phys Rev B. 46:1992;13437-13451.
-
(1992)
Phys Rev B
, vol.46
, pp. 13437-13451
-
-
Roland, C.1
Gilmer, G.H.2
-
46
-
-
0030217399
-
Applications of molecular dynamics simulations to crystal growth: Step energies and low temperature growth
-
Roland C, Gilmer GH. Applications of molecular dynamics simulations to crystal growth: step energies and low temperature growth. Comput Mater Sci. 6:1996;135-139.
-
(1996)
Comput Mater Sci
, vol.6
, pp. 135-139
-
-
Roland, C.1
Gilmer, G.H.2
-
47
-
-
0031117636
-
A Monte Carlo simulation of the physical vapor deposition of nickel
-
of outstanding interest. An MC method for simulating low energy PVD processes is developed and used to model the two-dimensional PVD of Ni. The method is used to predict the morphology/structure evolution of Ni films over the length and time scales encountered in practical deposition processes.
-
Zhou XW, Johnson RA, Wadley HNG. A Monte Carlo simulation of the physical vapor deposition of nickel. of outstanding interest Acta Mater. 45:1997;1455-1468 An MC method for simulating low energy PVD processes is developed and used to model the two-dimensional PVD of Ni. The method is used to predict the morphology/structure evolution of Ni films over the length and time scales encountered in practical deposition processes.
-
(1997)
Acta Mater
, vol.45
, pp. 1455-1468
-
-
Zhou, X.W.1
Johnson, R.A.2
Wadley, H.N.G.3
-
48
-
-
0031187412
-
Simulations of ZnSe/GaAs heteroepitaxial growth
-
of special interest. A hybrid approach of MD and MC simulations is used to increase the time scale of the simulation for thin film growth. The method seems to be well-suited to describe initial nucleation and growth.
-
Grein CH, Faurie JP, Bousquet V, Tournie E, Benedek R, delaRubia T. Simulations of ZnSe/GaAs heteroepitaxial growth. of special interest J Cryst Growth. 178:1997;258-267 A hybrid approach of MD and MC simulations is used to increase the time scale of the simulation for thin film growth. The method seems to be well-suited to describe initial nucleation and growth.
-
(1997)
J Cryst Growth
, vol.178
, pp. 258-267
-
-
Grein, C.H.1
Faurie, J.P.2
Bousquet, V.3
Tournie, E.4
Benedek, R.5
Delarubia, T.6
-
49
-
-
0031144465
-
Hyperdynamics: Accelerated molecular dynamics of infrequent events
-
of special interest. An example of a method to speed up MD calculations. These type of methodologies may make MD calculations computationally accessible to study realistic time and length scales for thin film growth.
-
Voter AF. Hyperdynamics: accelerated molecular dynamics of infrequent events. of special interest Phys Rev Lett. 78:1997;3908-3911 An example of a method to speed up MD calculations. These type of methodologies may make MD calculations computationally accessible to study realistic time and length scales for thin film growth.
-
(1997)
Phys Rev Lett
, vol.78
, pp. 3908-3911
-
-
Voter, A.F.1
-
50
-
-
36448998595
-
Theoretical foundations of dynamical Monte Carlo simulations
-
Fichthorn KA, Weinberg WH. Theoretical foundations of dynamical Monte Carlo simulations. J Chem Phys. 95:1991;1090-1096.
-
(1991)
J Chem Phys
, vol.95
, pp. 1090-1096
-
-
Fichthorn, K.A.1
Weinberg, W.H.2
-
51
-
-
5244272475
-
Dynamic Monte Carlo simulations of surface-rate processes
-
Kang HC, Weinberg WH. Dynamic Monte Carlo simulations of surface-rate processes. Account Chem Res. 25:1992;253-259.
-
(1992)
Account Chem Res
, vol.25
, pp. 253-259
-
-
Kang, H.C.1
Weinberg, W.H.2
-
52
-
-
0003105521
-
Island nucleation and growth on reconstructed GaAs(001) surfaces
-
of special interest. Interesting as an example of how experimental STM results can be used to develop detailed KMC models of nucleation of semiconductor surfaces.
-
Itoh M, Bell GR, Avery AR, Jones TS, Joyce BA, Vvedenskey DD. Island nucleation and growth on reconstructed GaAs(001) surfaces. of special interest Phys Rev Lett. 81:1998;633-636 Interesting as an example of how experimental STM results can be used to develop detailed KMC models of nucleation of semiconductor surfaces.
-
(1998)
Phys Rev Lett
, vol.81
, pp. 633-636
-
-
Itoh, M.1
Bell, G.R.2
Avery, A.R.3
Jones, T.S.4
Joyce, B.A.5
Vvedenskey, D.D.6
-
54
-
-
0030172032
-
A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth
-
Ito T, Shiraishi K. A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth. Surf Sci. 357-358:1996;486-489.
-
(1996)
Surf Sci
, vol.357-358
, pp. 486-489
-
-
Ito, T.1
Shiraishi, K.2
-
55
-
-
0030216282
-
A theoretical investigation of migration potentials of Ga adatoms near step edges on GaAs(001)-c(4 × 4) surface
-
Ito T, Shiraishi K. A theoretical investigation of migration potentials of Ga adatoms near step edges on GaAs(001)-c(4 × 4) surface. Jpn J Appl Phys. 35:1996;L1016-L1018.
-
(1996)
Jpn J Appl Phys
, vol.35
-
-
Ito, T.1
Shiraishi, K.2
-
56
-
-
0029304560
-
Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: Ab initio based microscopic calculation
-
Shiraishi K, Ito T. Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: ab initio based microscopic calculation. J Cryst Growth. 150:1995;158-162.
-
(1995)
J Cryst Growth
, vol.150
, pp. 158-162
-
-
Shiraishi, K.1
Ito, T.2
-
57
-
-
0031235028
-
The integrated multiscale modeling of diamond chemical vapor deposition
-
of outstanding interest. Both gas-phase reactor models and microscopic models are used to study diamond deposition using CVD. One of the few examples of linking macroscopic gas-phase models with microscopic models of surface evolution.
-
Srolovitz DJ, Dandy DS, Butler JE, Battaile CC, Paritosh. The integrated multiscale modeling of diamond chemical vapor deposition. of outstanding interest JOM. 49:1997;42-47 Both gas-phase reactor models and microscopic models are used to study diamond deposition using CVD. One of the few examples of linking macroscopic gas-phase models with microscopic models of surface evolution.
-
(1997)
JOM
, vol.49
, pp. 42-47
-
-
Srolovitz, D.J.1
Dandy, D.S.2
Butler, J.E.3
Battaile, C.C.4
Paritosh5
|