Effect of inert gas additive on Cl2-based inductively coupled plasma etching of NiFe and NiFeCo

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2223-2227

  Jung, K B ^a   Cho, H ^a   Hahn, Y B ^a,c   Hays, D C ^a   Lambers, E S ^a   Park, Y D ^a   Feng, T ^a   Childress, J R ^b   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH PRODUCTS; ETCH RATES; FUNCTION OF PRESSURE; ION ENERGIES; ION FLUXES; NEUTRAL DENSITIES; SMOOTH SURFACE;

CHLORINE; CHUCKS; DESORPTION; ELECTROMAGNETIC INDUCTION; INERT GASES; IONS; PLASMA ETCHING; XENON;

INDUCTIVELY COUPLED PLASMA;

EID: 0038200557     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581751     Document Type: Conference Paper

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