Modeling and simulation of feature-size-dependent etching of metal stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 179-185

  Abdollahi Alibeik, Shahram ^a   Zheng, Jie ^a   McVittie, James P ^a   Saraswat, Krishna C ^a   Gabriel, Calvin T ^b   Abraham, Susan C ^c  

^a Stanford University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ASPECT RATIO; COMPUTER SIMULATION; INDUCTIVELY COUPLED PLASMA; METALS; MONTE CARLO METHODS; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE PHENOMENA;

ASPECT RATIO DEPENDENT ETCHING (ARDE); HIGH DENSITY PLASMA REACTORS; SURFACE RECOMBINATION;

PLASMA ETCHING;

EID: 0035082290     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1340664     Document Type: Article

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