Silicides for 65 nm CMOS and beyond

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 267-278

  Kittl, Jorge A ^b   Lauwers, Anne ^a   Chamirian, Oxana ^a   Van Dal, Mark ^c   Akheyar, Amal ^d   Richard, Olivier ^a   Lisoni, Judit G ^a   De Potter, Muriel ^a   Lindsay, Richard ^a   Maex, Karen ^a  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d IMEC from Infineon Technologies

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; DEGRADATION; DIFFUSION; HIGH TEMPERATURE APPLICATIONS; NICKEL COMPOUNDS; OXIDES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC STABILITY;

DIODE LEAKAGE; GATE LENGTHS; HIGH THERMAL BUDGET; SHEET RESISTANCE; SILICIDATION; SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0242661410     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d7.5     Document Type: Conference Paper

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