Study of Ni-silicide contacts to Si:C source/drain

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 139-147

  Mertens, S ^a   Cho, Y ^b   Nouri, F ^b   Schreutelkamp, R ^b   Kim, Y ^b   Verheyen, P ^a   Steenbergen, J ^a   Vrancken, C ^a   Bender, H ^a   Richard, O ^a   Van Daele, B ^a   Vandervorst, W ^a   Geenen, L ^a   Absil, P ^a   Kubicek, S ^a   Demeurisse, C ^a   Toker Z ^a   Lauwers, A ^a  

^a IMEC   (Belgium)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ENERGY DISPERSIVE SPECTROSCOPY; MASS SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; TENSILE STRENGTH; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION XRD (HRXRD); NI-SILICIDE CONTACTS; TENSILE STRAIN;

MOSFET DEVICES;

EID: 33846954452     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356273     Document Type: Conference Paper

References (4)

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2. K.-W. Ang, K.J. Chui, V. Bliznetsov, A. Balasubramanian, M. F. Li, G. Samudra and Y.-C. Yeo, IEDM Tech, Dig., p. 1069, 2004.
3. J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M. de Potter, R. Lindsay and K. Maex, Microelectron. Eng. 70 (2003) 158
4. Y.-L. Jiang, A. Agarwal, G.-P. Ru, X.-P. Qu, B.-Z. Li, Extended Abstracts of the Fourth International Workshop on Junction Technology Shanghai, China, 15-16 March 2004.