Reaction of Ni and Si0.8Ge0.2: Phase formation and thermal stability

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 297-302

  Chamirian, O ^a,b   Lauwers, A ^a   Kittl, J A ^c   Van Dal, M ^d   De Potter, M ^a   Lindsay, R ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TEXAS INSTRUMENTS   (Belgium)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; NICKEL; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

GERMANOSILICIDES; PHASE FORMATION; SHEET RESISTANCE; THERMAL OXIDATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4544229826     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.033     Document Type: Conference Paper

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