Low temperature spike anneal for Ni-silicide formation

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 303-310

  Lauwers, A ^a   Kittl, J A ^b   Van Dal, M ^c   Chamirian, O ^a   Lindsay, R ^a   De Potter, M ^a   Demeurisse, C ^a   Vrancken, C ^a   Maex, K ^a   Pages X ^d   Van der Jeugd, K ^d   Kuznetsov, V ^e   Granneman, E ^e  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d ASM BELGIUM   (Belgium)

^e ASM International NV   (Netherlands)

Author keywords

Narrow features; Ni silicide; Spike anneal

Indexed keywords

ETCHING; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

NARROW FEATURES; NI-SILICIDES; SHEET RESISTANCE; SPIKE ANNEAL;

NICKEL COMPOUNDS;

EID: 4544227749     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.048     Document Type: Conference Paper

References (5)

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