Direct evidence of linewidth effect: Ni31 Si12 and Ni3 Si formation on 25 nm Ni fully silicided gates

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Kittl, J A ^a   Lauwers, A ^a   Demeurisse, C ^a   Vrancken, C ^a   Kubicek, S ^a   Absil, P ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL ALLOYS; NUCLEATION; POLYCRYSTALLINE MATERIALS; SILICIDES; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

BLANKET FILMS; PHASE FORMATION SEQUENCES; SILICIDATION;

GATES (TRANSISTOR);

EID: 34248583030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2732820     Document Type: Article

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