Effects of alloying on properties of NiSi for CMOS applications

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 153-158

  Van Dal, Mark ^a   Akheyar, Amal ^b   Kittl, Jorge A ^c   Chamirian, Oxana ^d   De Potter, Muriel ^e   Demeurisse, Caroline ^e   Lauwers, Anne ^e   Maex, Karen ^d,e  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b Infineon   (Belgium)

^c TEXAS INSTRUMENTS   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GRAZING INCIDENCE X-RAY DIFFRACTION (GIXRD); SHEET RESISTANCE; TRANSMISSION LINE STRUCTURES (TLS); WET ETCHING;

ALLOYING ELEMENTS; CMOS INTEGRATED CIRCUITS; CRYSTAL ORIENTATION; DOPING (ADDITIVES); HEAT TREATMENT; LOW TEMPERATURE EFFECTS; PYROLYSIS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE TREATMENT; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION;

NICKEL COMPOUNDS;

EID: 5544238817     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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