Applications of Ni-based silicides to 45 nm CMOS and beyond

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 31-42

  Kittl, Jorge A ^b   Lauwers, Anne ^a   Chamirian, Oxana ^a   Pawlak, Malgorzata A ^a   Van Dal, Mark ^c   Akheyar, Amal ^d   De Potter, Muriel ^a   Kottantharayil, Anil ^a   Pourtois, Geoffrey ^a   Lindsay, Richard ^a   Maex, Karen ^a  

^a IMEC   (Belgium)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SENSITIVITY ANALYSIS; THERMODYNAMIC STABILITY;

DIFFUSION LIMITED KINETICS; JUNCTION LEAKAGES; RAPID THERMAL PROCESSES (RTP); SHEET RESISTANCE;

SILICA;

EID: 5544306527     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c2.1     Document Type: Conference Paper

References (17)

1. A. Lauwers, P. Besser, T. Gut, A. Satta, M. de Potter, R. Lindsay, N. Roelandts, F. Loosen, S. Jin, H. Bender, M. Stucchi, C. Vrancken, B. Deweerdt and K. Maex, Microelectronic Engineering 50 (2000) 103.
2. J. A. Kittl, Q. Z. Hong, C. P. Chao, I.C. Chen, N. Yu, S. O'Brien and M. Hanratty, 1997 Symp. VLSI Tech. Digest (1997) 103.
3. J. A. Kittl, W. T. Shiau, D. Miles, K. E. Violette, J. Hu and Q.Z. Hong, Solid State Technology 42 (6) June 1999 (1999) 81, and (8) August 1999 (1999) 55.
4. J. A. Kittl, W. T. Shiau, D. Miles, K. E. Violette, J. Hu and Q.Z. Hong, Solid State Technology 42 (6) June 1999 (1999) 81, and (8) August 1999 (1999) 55.
5. J. A. Kittl, W. T. Shiau, Q. Z. Hong and D. Miles, Microelectronic Engineering 50 (2000) 87.
6. J. P. Gambino and E. G. Colgan, Materials Chemistry and Physics 52 (1998) 99.
7. M. Qin, V. M. C. Poon and S. C. H. Ho, J. Electrochem. Soc. 148, (2001) 271.
8. W.P. Maszara, Z. Krivokapic, P. King, J.S. Goo and M.R. Lin, JEDM Tech. Dig., (2002) 367.
9. J. Kedzierski, E. Nowak, T. Kanarsky, Y. Zhang, D. Boyd, R. Carruthers, C. Cabral, R. Amos, C. Lavoie, R. Roy, J. Newbury, E. Sullivan, J. Benedict, P. Saunders, K. Wong, D. Canaperi, M. Krishnan, K.L. Lee, B. A. Rainey, D. Fried, P. Cottrell, H.S. P. Wong, M. Ieong, and W. Haensch, IEDM Tech. Dig, (2002) 247.
10. J. A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, O. Richard, J. G. Lisoni, M. de Potter, R. Lindsay and K. Maex, Mat. Res. Soc. Symp. Proc. 765 (2003) 267.
11. J. A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M. de Potter, R. Lindsay and K. Maex, Microelectronic Engineering 70 (2003) 158.
12. C. Lavoie, F. M. d'Heurle, C. Detavernier and C. Cabral Jr., Microelectronic Engineering 70 (2003) 144.
13. J.P. Liu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, J. Ruan, L. Tsung, R. Kuan, T. Grider, D. Mercer and C. Montgomery, 2002 IEDM Technical Digest (2002) 371.
14. D. Mangelinck, J.Y. Dai, J.S. Pan and S.K. Lahiri, Appl. Phys. Lett. 75 (1999) 1736.
15. M.C. Sun, M.J. Kim, J.H. Ku, K.J. Roh, C.S. Kim, S.P. Youn, S.W. Jung, S. Choi, N.I. Lee, H.K. Kang and K.P. Sun, Symp. VLSI Tech. Digest (2003) 81.
16. S. L. Zhang, Microelectronic Engineering 70 (2003) 174.
17. V. Teodorescu, L. Nistor, H. Bender, A. Steegen, A. Lauwers, K. Maex and J. Van Landuyt, J. Appl. Phys. 90 (2001) 167.