Improved thermal stability of Ni-silicides on Si:C epitaxial layers

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2542-2546

  Machkaoutsan, V ^a   Mertens, S ^b   Bauer, M ^c   Lauwers, A ^b   Verheyden, K ^a   Vanormelingen, K ^a   Verheyen, P ^b   Loo, R ^b   Caymax, M ^b   Jakschik, S ^b   Theodore, D ^d   Absil, P ^b   Thomas, S G ^c   Granneman, E H A ^e  

^a ASM BELGIUM   (Belgium)

^b IMEC   (Belgium)

^c ASM AMERICA   (United States)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e ASM Europe BV   (Netherlands)

Author keywords

Epitaxy; Ni; SiC stressors; Silicide; Thermal stability

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); NICKEL COMPOUNDS; SILICON CARBIDE; STRAIN RATE; THERMODYNAMIC STABILITY;

DEGRADATION MECHANISM; SIC STRESSORS; SILICIDE;

EPITAXIAL LAYERS;

EID: 34648841039     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.017     Document Type: Article

References (6)

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