Linewidth effect and phase control in Ni fully silicided gates

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 647-649

  Kittl, J A ^a   Lauwers, A ^a   Hoffmann, T ^a   Veloso, A ^a   Kubicek, S ^a   Niwa, M ^a   van Dal, M J H ^b   Pawlak, M A ^a   Demeurisse, C ^a   Vrancken, C ^a   Brijs, B ^a   Absil, P ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Full silicidation; Fully silicided (FUSI); High k dielectric; Metal gate; MOSFET; Ni2Si, Ni31Si12; NiSI; Short channel; Vt rolloff

Indexed keywords

CHARACTERIZATION; GATES (TRANSISTOR); NICKEL ALLOYS; PERMITTIVITY; PHASE TRANSITIONS; THERMAL EFFECTS;

FULL SILICIDATION; FULLY SILICIDED (FUSI); HIGH-K DIELECTRIC; METAL GATE; NICKEL FULLY SILICIDED GATES;

MOSFET DEVICES;

EID: 33746512637     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.879036     Document Type: Article

References (6)

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