What do we certainly know about 1/f noise in MOSTs?

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3070-3085

  Vandamme, Lode K J ^a   Hooge, F N ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

1 f noise; Burst noise; MOS devices; MOSFET; Semiconductor device noise

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS;

1/F NOISE; 1/F NOISES; ANALYTICAL EXPRESSIONS; BURST NOISE; EMPIRICAL RELATIONS; EXPERIMENTAL STUDIES; FREE ELECTRONS; HIGH LOWS; HOMOGENEOUS SAMPLES; LOW-FREQUENCY NOISES; MCWHORTER MODELS; MOBILITY DEGRADATIONS; MOBILITY FLUCTUATIONS; MOSFET; NUMBER FLUCTUATIONS; POWER DENSITIES; SEMI-CONDUCTORS; SEMICONDUCTOR DEVICE NOISE; SUB MICROMETERS; THEORETICAL MODELS; UNCORRELATED;

THERMAL NOISE;

EID: 56549103860     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005167     Document Type: Article

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