On the origin of 1/F noise in mosfets

Fluctuation and Noise Letters

Volumn 7, Issue 3, 2007, Pages

  Vandamme, L K J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

1 f noise; CMOS; Low frequency noise; Mobility fluctuation; MOSFET; Noise source; Number fluctuation; RTS noise

Indexed keywords

EID: 34848823176     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477507003970     Document Type: Article

References (44)

1. I. M. Hafez, G. Ghibaudo and F. Balestra, Flicker noise in metal-oxide-semiconductor transistors from liquid helium to room, temperature, J. Appl. Phys. 66(5) (1989) 2211-2213.
2. G. Ghibaudo, O Roux-dit -Buisson and J. Brini, Impact of scaling down on low frequency noise in silicon MOS transistors, Physica Status Solidi A 132 (1992) 501-507.
3. G. Ghibaudo and T. Boutchacha, Electrical noise and RTS fluctuations in advanced CMOS devices, Microelectronics and Reliability 42(4-5) (2002) 573-582.
4. M. Fadlallah, G. Ghibaudo, J. Jomaah and G. Guegan, Static and low frequency noise characterization in surface-and burried-mode 0.1mm PMOSFETS, Solid Sate Electr. 47 (2003) 155-1160.
5. M. J. Kirton and M. J. Uren, Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise, Advances in Physics 38(4) (1989) 367-468.
6. A. J. Scholten, L. F. Tiemeijer, R. van Langevelde, R. J. Havens, A. T. A. Zegers-Van Duijnhoven and V. C. Venezia, Noise modeling for RF CMOS circuit simulation, IEEE Trans. Electr. Dev. 50(3) (2003) 618-632.
7. J.-H. Lee, S.-Y. Kim, I. Cho, S. Hwang and J.-H. Lee, 1/f noise characteristics of sub-100nm MOS transistors, J. Semiconductor Technology and Science JSTS 6(1) (2006) 38-42.
8. F. Crupi, P. Srinivasan, P. Magnone, E. Simoen, C. Pace, D. Misra and C. Claeys, Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks, IEEE Electron Device Letters 27(8) (2006) 688-691.
9. M. Valenza, A. Hoffmann, A. Laigle, D. Rigaud and M. Marin, Impact of scaling down on 1/f noise in MOSFETs, in Noise in Dev. and Circuits, (ed.) M. J. Deen et al., Bellingham: SPIE-Int. Soc. Opt. Eng (2003) pp. 29-43.
10. E. P. Vandamme and L. K. J. Vandamme, Unsolved problems on 1/f noise in MOSFETs and possible solutions, UPoN'99, AIP Conference Proceedings 511 (1999) 395-400.
11. J. Rhayem, D. Rigaud, A. Eya'a, M. Valenza and A. Hoffmann, 1/f noise in metal-oxide-semiconductor transistors biased in weak inversion, J. Appl. Phys. 89(7) (2001) 4192-4194.
12. A. L. McWhorter. 1/f Noise and germanium surface properties, R. H. Kingston. Philadelphia: Univ. Pennsylvania Press. (Semiconductor surface physics, Proc. Conf. of Physics of Semi-conductor Surfaces) (1957) pp. 207-228.
13. M. Surdin, Fluctuations de courant thermionique et le "flicker effect", J. de Physique & Radium. (Paris.) 10 (1939) 188-189.
14. A. E. Belyakov, L. K. J. Vandamme, M. Y. Perov and A. I. Yakimov, The different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes, Fluctuation and Noise Letters 3(3) (2003) L325-L339.
15. N. Lukyanchikova, M. Petrichuk, N. Garbar, E. Simoen, A. Mercha, C. Claeys, H. van Meer and K. De Meyer, The 1/f(1.7) noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide, IEEE Trans. Electr. Dev. 49(12) (2002) 2367-2370.
16. E. Simoen and C. Claeys, On the flicker noise in submicron silicon MOSFETS, Solid-State Electr. 43(5) (1999) 865-882.
17. R. Jayaraman and C. G. Sodini, 1/f noise interpretation of gate oxide nitridation and reoxidation of dielectric traps, IEEE Trans. Electr. Dev. (1) (1990) 305-309.
18. H. Wong and Y. C. Cheng, Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors, J. Appl. Phys. 67(2) (1990) 863-867.
19. E. A. M. Klumperink, S. L. J. Gierkink, A. P. van der Wel and B. Nauta, Reducing MOSFET 1/f noise and power-consumption by switched biasing, IEEE J. Solid-State Circuits 35(7) (2000) 994-1001.
20. M. Toita, L. K. J. Vandamme, S. Sugawa, A. Teramoto and T. Ohmi, Geometry and bias dependence of low-frequency random telegraph signal, and 1/f noise levels in MOSFETs, Fluctuation and Noise Letters 5(4) (2005) L539-L548.
21. L. K. J. Vandamme and M. Macucci, 1/f and RTS noise in submicron devices: Faster is noisier, Unsolved. Problems of Noise and Fluctuations UPoN, (eds.) L. Reggiani et al., AIP 0-7354-0289-2/05. (CP800) (2005) 436-443.
22. L. K. J. Vandamme, 1/f Noise in MOSTs: Faster is Noisier, in Adv. Exp. Methods for Noise Research in Nanoscale Electronic Devices, Kluwer Acad. Publ. (2004) 109-120.
23. X. Li, C. Barros, E. P. Vandamme and L. K. J. Vandamme, Parameter extraction and 1/f noise in a surface and a bulk-type, p-channel LDD MOSFET, Solid-State Elect. 37(11) (1994) 1853-1862.
24. L. K. J. Vandamme, X. Li and D. Rigaud, 1/f noise in MOS devices, mobility or number fluctuations? IEEE Trans. Elect. Dev. 41(11) (1994) 1936-1945.
25. 2/ATiN gate-stack pMOS-FETs, IEEE Electr. Dev. Lett. 27(6) (2006) 508-510.
26. P. Srinivasan, E. Simoen, R. Singanamalla, H. Y. Yu, C. Claeys and D. Misra, Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-k dielectrics, Solid-State Elect. 50 (2006) 992-998.
27. A. K. M. Ahsan and D. K. Schroder, Impact of post-oxidation annealing on low-frequency noise, threshold voltage, and subthreshold swing of p-channel MOSFETs, IEEE Electr. Dev. Lett. 25(4) (2004) 211-213.
28. N. G. Tarr, C. Plett, A. Yeaton, G. F. Mackay and I. Thomson, Limitations on MOSFET dosimeter resolution imposed by 1/f noise, IEEE Trans. Nuclear Sc. 43(5) (1996) 2492-2495.
29. F. M. Klaassen, Characterization of low 1/f noise in MOS transistors, IEEE Trans. Electr. Dev. ED-18(10) (1971) 887-891.
30. L. K. J. Vandamme and R. G. M. Penning de Vries, Correlation between MOST 1/f noise and CCD transfer inefficiency, Solid-State Electr. 28(10) (1985) 1049-1056.
31. M. Decker, L. Gouskov and D. Rigaud, Noise measurements in Metal-Oxide-Semiconductor transistors below saturation, Electr. Lett. 3(12) (1967) 565-566.
32. E. A. Hendriks and R. J. J. Zijlstra, 1/f noise in (100) n-channel Si MOSFETS from T = 4.2 K to T = 295 K, Solid-State Electr. 31(6) (1988) 1105-1111.
33. M. J. Prest, D. J. F. Fulgoni, A. R. Bacon, T. J. Grasby, E. H. C. Parker and T. E. Whall, Low-frequency noise mechanisms inSi and pseudomorphic SiGe p-channel field effect transistors, Appl. Phys. Lett. 85(24) (2004) 6019-6021.
34. L. K. J. Vandamme and S. Oosterhoff, Annealing of ion-implanted resistors reduces the 1/f noise, J. Appl. Phys. 59(9) (1986) 3169-3174.
35. R. H. M. Clevers, Volume and temperature dependence of the 1/f noise parameter a in Si, Physica B 154 (1989) 214-224.
36. L. K. J. Vandamme, Bulk and Surface 1/f Noise, IEEE Trans. Electr. Dev. 36(5) (1989) 987-992.
37. E. P. Vandamme and L. K. J. Vandamme, Critical discussion on unified 1/f noise models for MOSFETs, IEEE Trans. Electr. Dev. 47(11) (2000) 2146-2152.
38. P. Fantini, D. Riccardi and G. Croce, Buried CMOS structure with a straddle-gate architecture for low-noise analog applications, Fluctuation and Noise Letters 3(3) (2003) 349-355.
39. R. D. Black, M. B. Weissman and P. J. Restle, 1/f noise in silicon wafers, J. Appl. Phys. 53(9) (1982) 6280-6284.
40. G. A. Garfunkel and M. B. Weissman, 1/f noise and the field effect in gated resistors, J. Appl. Phys. 57(2) (1985) 634-636.
41. S. Christensson, I. Lundstrom and C. Svensson, Low frequency noise in MOS transistors-I, Solid-State Electronics 11 (1968) 797-812.
42. S. T. Hsu, Surface state related 1/f noise in MOS transistors, Solid-State Electronics 13 (1970) 1451-1459.
43. H. D. Xiong, D. M. Fleetwood, B. K. Choi and A. L. Sternberg, Temperature dependence and irradiation response of 1/f-noise in MOSFETs, IEEE Trans Nuclear Sc. 49(6) (2002) 2718-2723.
44. F. N. Hooge, T. G. M. Kleinpenning and L. K. J. Vandamme, Experimental studies on 1/f noise, Rep. Prog. Phys. 44(5) (1981) 479-532.