On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

Physica B: Condensed Matter

Volumn 357, Issue 3-4, 2005, Pages 507-524

  Vandamme, L K J ^a   Hooge, F N ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

1 f noise; McWhorter model; Numerical values; VGT dependence

Indexed keywords

CAPACITORS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON SCATTERING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; STATISTICAL METHODS; THRESHOLD VOLTAGE;

1/F NOISE; MCWHORTER MODEL; NUMERICAL VALUES; VGT-DEPENDENCE;

MOSFET DEVICES;

EID: 14544305014     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.09.106     Document Type: Article

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