Correlation between latent interface trap buildup and 1/f noise in metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 70, Issue 9, 1997, Pages 1158-1160

  Johnson, Melissa J ^a   Fleetwood, Daniel M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009051124     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118512     Document Type: Article

References (26)

1. A. van der Ziel, Adv. Electron. Electron Phys. 49, 225 (1979).
2. M. B. Weissman, Annu. Rev. Mater. Sci. 26, 395 (1996); Rev. Mod. Phys. 60, 537 (1988).
3. M. B. Weissman, Annu. Rev. Mater. Sci. 26, 395 (1996); Rev. Mod. Phys. 60, 537 (1988).
4. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
5. B. K. Jones, Adv. Electron. Electron Phys. 87, 201 (1994).
6. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, IEEE Trans. Electron Devices 41, 1953 (1994); D. M. Fleetwood, W. L. Warren, M. R. Shaneyfelt, R. A. B. Devine, and J. H. Scofield, J. Non-Cryst. Solids 187, 199 (1995).
7. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, IEEE Trans. Electron Devices 41, 1953 (1994); D. M. Fleetwood, W. L. Warren, M. R. Shaneyfelt, R. A. B. Devine, and J. H. Scofield, J. Non-Cryst. Solids 187, 199 (1995).
8. P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, J. Appl. Phys. 50, 3492 (1979).
9. D. J. DiMaria, J. Appl. Phys. 68, 5234 (1990).
10. R. E. Stahlbush, A. H. Edwards, D. L. Griscom, and B. J. Mrstik, J. Appl. Phys. 73, 658 (1993).
11. D. M. Fleetwood, W. L. Warren, J. R. Schwank, P. S. Winokur, M. R. Shaneyfelt, and L. C. Riewe, IEEE Trans. Nucl. Sci. 42, 1698 (1995), and references therein.
12. J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and P. S. Winokur, IEEE Electron Device Lett. 13, 203 (1992); J. R. Schwank, D. M. Fleet-wood, M. R. Shaneyfelt, P. S. Winokur, C. L. Axness, and L. C. Riewe, IEEE Trans. Nucl. Sci. 39, 1953 (1992).
13. J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and P. S. Winokur, IEEE Electron Device Lett. 13, 203 (1992); J. R. Schwank, D. M. Fleet-wood, M. R. Shaneyfelt, P. S. Winokur, C. L. Axness, and L. C. Riewe, IEEE Trans. Nucl. Sci. 39, 1953 (1992).
14. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer. and D. C. Turpin, IEEE Trans. Nucl. Sci. 31, 1453 (1984).
15. it as the "effective" interface-trap charge density. Unfortunately, the Oki transistors used in this study do not have a separate substrate contact, so charge pumping techniques cannot be used to try to distinguish between interface and border trap effects.
16. D. M. Fleetwood, IEEE Trans. Nucl. Sci. 43, 779 (1996); D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. 73, 5058 (1993).
17. D. M. Fleetwood, IEEE Trans. Nucl. Sci. 43, 779 (1996); D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. 73, 5058 (1993).
18. T. L. Meisenheimer and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 37, 1696 (1990).
19. J. H. Scofield, N. Borland, and D. M. Fleetwood, IEEE Trans. Electron Devices 41, 1946 (1994).
20. Some of these Oki transistors exhibited noise that deviated from a pure 1/f dependence before exposure to ionizing radiation due to the Lorentzian noise associated with prominent individual defects, but after irradiation all power spectra were accurately described by a ∼1/f power law.
21. L. K. J. Vandamme, X. Li, and D. Rigaud, IEEE Trans. Electron Devices 41, 1936 (1994).
22. T. L. Meisenheimer, D. M. Fleetwood, M. R. Shaneyfelt, and L. C. Riewe, IEEE Trans. Nucl. Sci. 38, 1297 (1991).
23. K. K. Hung, P. K. Ho, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices 37, 654 (1990).
24. P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin, IEEE Trans. Nucl. Sci. 33, 1343 (1986).
25. Differences in pre- and postirradiation values of K between the devices of Figs. 2 and 3 are due in part to sample-to-sample variations, and in part to the inability of K to fully account for the gate and drain voltage dependencies of the noise of p-MOS transistors near room temperature, as discussed in detail in Ref. 15. However, the noise was also checked periodically at several other gate and drain biases throughout the test sequences of Figs. 2 and 3, and it was determined that the specific bias conditions did not affect the trends in the data or the conclusions drawn.
26. See, for example, P. Augier, J. L. Todsen, D. Zupac, R. D. Schrimpf, K. F. Galloway, and J. A. Babcock, IEEE Trans. Nucl. Sci. 39, 2012 (1992).